Intermodulation Linearity in High-k/Metal Gate 28 nm RF CMOS Transistors
نویسندگان
چکیده
This paper presents experimental characterization, simulation, and Volterra series based analysis of intermodulation linearity on a high-k/metal gate 28 nm RF CMOS technology. A figure-of-merit is proposed to account for both VGS and VDS nonlinearity, and extracted from frequency dependence of measured IIP3. Implications to biasing current and voltage optimization for linearity are discussed.
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تاریخ انتشار 2015